High p-type doping of ZnBeSe using a modified delta-doping technique with N and Te
نویسندگان
چکیده
High crystalline quality ZnBeSe epilayers were grown nearly lattice matched to GaAs ~001! substrates by molecular beam epitaxy with a Be–Zn co-irradiation. A ~132! reflection high energy electron diffraction pattern was observed after the Be–Zn co-irradiation of the GaAs ~234! surface. A high p-type doping level of 1.5310 cm was achieved for ~N1Te! triple-delta doping ~d doping! of ZnBeSe epilayers, whereby three adjacent d layers of N and Te were deposited in each doping cycle. X-ray diffraction measurements reveal that ~N1Te! d-doped ZnBeSe samples with a Te concentration of about 0.5% remain of very high crystalline quality with an X-ray rocking curve linewidth of 51 arcsec. Low temperature photoluminescence measurements show some emission peaks related to Te2 clusters and/or Ten>3 clusters. © 2001 American Institute of Physics. @DOI: 10.1063/1.1384863#
منابع مشابه
Enhancement of p-type doping of ZnSe using a modified „N¿Te...d -doping technique
Delta doping techniques have been investigated to enhance the p-type doping of ZnSe. Tellurium was used as a codopant for improving the nitrogen doping efficiency. The net acceptor concentration (NA2ND) increased to 1.5310 18 cm using single d doping of N and Te ~N1Te!, while it was limited to 8310 cm by d doping of N alone. A promising approach was developed in which three consecutive d-doped ...
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